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Yintoni i-photovotaics?

2022-12-22

I-Photovoltaics ukuguqulwa ngokuthe ngqo kokukhanya kumbane kwinqanaba le-athomu. Ezinye izixhobo zibonisa ipropathi eyaziwa ngokuba yi-photoelectric effect ebangela ukuba bafunxe iifotoni zokukhanya kunye nokukhulula ii-electron. Xa ezi electron zasimahla zibanjiwe, iziphumo zangoku zombane ezinokusetyenziswa njengombane.

Umphumo wokufota waphawulwa okokuqala yingcali yefiziksi yaseFransi, uEdmund Bequerel, ngowe-1839, owafumanisa ukuba izinto ezithile zaziza kuvelisa umlinganiselo omncinane wombane xa ukhanyiselwe ekukhanyeni. Ngomnyaka we-1905, u-Albert Einstein wachaza uhlobo lokukhanya kunye nefuthe le-photoelectric apho iteknoloji ye-photovoltaic isekelwe khona, apho kamva wafumana ibhaso likaNobel kwi-physics. Imodyuli yokuqala ye-photovoltaic yakhiwa yi-Bell Laboratories kwi-1954. Yahlawuliswa njengebhetri yelanga kwaye yayininzi nje inomdla njengoko yayibiza kakhulu ukufumana ukusetyenziswa ngokubanzi. Ngeminyaka yoo-1960, ishishini lasemajukujukwini laqalisa ukusebenzisa ngokunzulu itekhnoloji ukubonelela ngamandla kwiziphekepheke. Ngeenkqubo zesithuba, iteknoloji yaqhubela phambili, ukuthembeka kwayo kwasekwa, kwaye iindleko zaqala ukuhla. Ngexesha lengxaki yamandla kwiminyaka yee-1970, iteknoloji ye-photovoltaic yafumana ukuqatshelwa njengomthombo wamandla wezicelo ezingekho kwindawo.

Lo mzobo ungasentla ubonisa ukusebenza kweseli ye-photovoltaic esisiseko, ekwabizwa ngokuba yiseli yelanga. Iiseli zelanga zenziwe ngeentlobo ezifanayo zemathiriyeli ye-semiconductor, njenge-silicon, esetyenziswa kwishishini le-microelectronics. Kwiiseli zelanga, i-wafer ye-semiconductor ebhityileyo iphathwa ngokukodwa ukwenza indawo yombane, ilungile kwelinye icala kwaye ingalunganga kwelinye. Xa amandla okukhanya abetha iseli yelanga, ii-elektroni zikhutshwa zikhululeke kwii-athom ezikwimathiriyeli ye-semiconductor. Ukuba ii-conductor zombane zincanyathiselwe kumacala amahle kunye namabi, okwenza isekethe yombane, ii-electron zingabanjwa ngendlela yombane-- oko kukuthi, umbane. Lo mbane usenokusetyenziselwa ukunika amandla umthwalo, njengesibane okanye isixhobo.

Inani leeseli zelanga ezixhunyiwe ngombane omnye komnye kwaye zifakwe kwisakhiwo senkxaso okanye isakhelo sibizwa ngokuba yimodyuli ye-photovoltaic. Iimodyuli zenzelwe ukubonelela ngombane kumbane othile, njengenkqubo eqhelekileyo ye-12 volts. Imveliso yangoku ixhomekeke ngokuthe ngqo kubungakanani bokukhanya okubetha imodyuli.

Ezona zixhobo zixhaphakileyo namhlanje zePV zisebenzisa isiphambuka esinye, okanye ujongano, ukwenza indawo yombane ngaphakathi kwesemiconductor efana nePV cell. Kwi-cell-junction ye-PV yeseli, kuphela iifotoni ezinamandla alinganayo okanye amakhulu kune-gap yebhendi yezinto zeseli zinokukhulula i-electron kwisekethe yombane. Ngamanye amazwi, impendulo ye-photovoltaic yeeseli ze-junction enye ilinganiselwe kwinxalenye ye-spectrum yelanga amandla ayo angaphezulu kwe-band gap yezinto ezifunxayo, kunye neefotoni zamandla aphantsi azisetyenziswa.

Enye indlela yokujikeleza lo mda kukusebenzisa iiseli ezimbini (okanye ngaphezulu) ezahlukeneyo, ezinesithuba sebhendi engaphezulu kwesinye kunye nesiphambuka esingaphezulu kwesinye, ukuvelisa amandla ombane. Ezi zibizwa ngokuba ziiseli "ze-multijunction" (ezikwabizwa ngokuba yi "cascade" okanye "tandem" cell). Izixhobo ze-Multijunction zinokufikelela kuguquko olusulungekileyo olupheleleyo kuba ziyakwazi ukuguqula ngakumbi i-spectrum yamandla okukhanya kumbane.

Njengoko kubonisiwe ngezantsi, isixhobo esidibanisa izinto ezininzi sisipakisho seeseli ezidityanisiweyo zomntu omnye ngokwehla ngolandelelwano lomsantsa webhendi (Umzekelo). Iseli ephezulu ibamba iifotoni zamandla aphezulu kwaye idlulise ezinye iifotoni ukuze zifunxwe ziiseli ezisezantsi-ze-gap.

Uninzi lophando lwanamhlanje kwiiseli ze-multijunction ligxile kwi-gallium arsenide njengenye (okanye zonke) zeeseli zecandelo. Iiseli ezinjalo zifikelele kwimpumelelo emalunga ne-35% phantsi kokukhanya kwelanga. Ezinye izinto ezifundwe kwizixhobo ze-multijunction ziye zaba yi-silicon ye-amorphous kunye ne-copper indium diselenide.

Ngokomzekelo, i-multijunction device engezantsi isebenzisa iseli ephezulu ye-gallium indium phosphide, "i-tunnel junction," ukuncedisa ukuhamba kwee-electron phakathi kweeseli, kunye ne-cell cell ye-gallium arsenide.

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